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Electron Beam Absorbed Current (EBAC) Characterization System nanoEBAC NE4000

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Code: #16582

Supplier: Hitachi Asia (Vietnam) Co., Ltd.

The Hitachi NE4000 nanoEBAC is an electron beam based probing system for electrical characterization and EBAC analysis and imaging of microelectronic device interconnects, materials, and components.

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rightMORE INFORMATION

  • - Provides high quality EBAC images with Hitachi's patented high performance EBAC amplifiers.
    - Intuitive GUI(Graphical User Interface) with various image and color processing functions.
    - Field Proven, low chromatic aberration, Cold Field Emission (CFE) electron gun for low accelerating voltage imaging and beam damage reduction of the circuit.
    - Field Proven, low chromatic aberration, Cold Field Emission (CFE) electron gun for low accelerating voltage imaging and beam damage reduction of the circuit.
    - High precision nano-probe units.
     

  • Probe unit

    Unit number

    4

    Driving method

    Piezoelectric

    Fine stroke range

    5 µm (X,Y)

    Coarse stroke range

    6 mm (X,Y)

    Specimen stage / Base stage

    Specimen size

    25 mm × 25 mm × 1 mm thick or less

    Traverse position

    Measurement / Specimen exchange position

    Specimen exchange

    Air-locked exchange chamber

    Prober navigation

    Stage traverse to probe position

    Measurement position memory

    Probe coarse adjustment

    CCD image display

    Image display from lateral direction

    Electron optics

    Electron gun

    Cold field emission electron source

    Accelerating voltage

    0.5 kV to 30 kV

    Resolution

    15 nm (at 2 kV, WD=15 mm)

    Image shift

    ±150 µm (at 2 kV, WD=15 mm)

    EBAC amplifier / Image display

    Amplifier type

    Current amplifier / Differential amplifier

    Image display

    SEM / EBAC (Single / Parallel / Overlay)

    Image processing

    Black and white reversal display, color display, brightness adjustment, slow scan integration, belt scan

 

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